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发信人: tobyhome2000 (luo), 信区: Physics 标题: Re: nana letters北大怎么发了那么多？发信站: BBS 珞珈山水站 (Sun Nov 18 14:50:59 2007) 【在 tobyhome2000 (luo) 的大作中提到: 】 : Resonant raman spectroscopy of individual strained single-wall carbon nano.. : s : Author(s): Duan XJ (Duan, Xiaojie), Son HB (Son, Hyungbin), Gao B (Gao, Bo.. : ................... Rational synthesis of p-type zinc oxide nanowire arrays using simple chemical vapor deposition Author(s): Xiang B (Xiang, Bin), Wang PW (Wang, Pengwei), Zhang XZ (Zhang, Xin gzheng), Dayeh SA (Dayeh, Shadi. A.), Aplin DPR (Aplin, David P. R.), Soci C ( Soci, Cesare), Yu DP (Yu, Dapeng), Wang DL (Wang, Deli) Source: NANO LETTERS 7 (2): 323-328 FEB 2007 Document Type: Article Language: English Cited References: 32 Times Cited: 7 Abstract: We report, for the first time, the synthesis of the high-quality p-t ype ZnO NWs using a simple chemical vapor deposition method, where phosphorus pentoxide has been used as the dopant source. Single-crystal phosphorus doped ZnO NWs have their growth axis along the < 001 > direction and form perfect ve rtical arrays on a-sapphire. P-type doping was confirmed by photoluminescence measurements at various temperatures and by studying the electrical transport in single NWs field-effect transistors. Comparisons of the low-temperature PL of unintentionally doped ZnO (n-type), as-grown phosphorus-doped ZnO, and anne aled phosphorus-doped ZnO NWs show clear differences related to the presence o f intragap donor and acceptor states. The electrical transport measurements of phosphorus-doped NW FETs indicate a transition from n-type to p-type conducti on upon annealing at high temperature, in good agreement with the PL results. The synthesis of p-type ZnO NWs enables novel complementary ZnO NW devices and opens up enormous opportunities for nanoscale electronics, optoelectronics, and medici nes. KeyWords Plus: ZNO NANOWIRE; MAGNETIC SEMICONDUCTORS; PATTERNED GROWTH; SINGLE ; FIELD; TRANSISTORS; NANOBELTS; LASERS Addresses: Wang DL (reprint author), Univ Calif San Diego, Dept Elect & Comp E ngn, La Jolla, CA 92093 USA Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA Peking Univ, Electron Microscopy Lab, Sch Phys, Beijing 100871, Peoples R Chin a E-mail Addresses: dwang@ece.ucsd.edu Publisher: AMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 USA Subject Category: Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary -- ※ 来源:·珞珈山水BBS站 http://bbs.whu.edu.cn·[FROM: 202.114.78.*]
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发信人: tobyhome2000 (luo), 信区: Physics
标题: Re: nana letters北大怎么发了那么多？
发信站: BBS 珞珈山水站 (Sun Nov 18 14:50:59 2007)

【在 tobyhome2000 (luo) 的大作中提到: 】
: Resonant raman spectroscopy of individual strained single-wall carbon nano..
: s
: Author(s): Duan XJ (Duan, Xiaojie), Son HB (Son, Hyungbin), Gao B (Gao, Bo..
: ...................

Rational synthesis of p-type zinc oxide nanowire arrays using simple chemical
vapor deposition
Author(s): Xiang B (Xiang, Bin), Wang PW (Wang, Pengwei), Zhang XZ (Zhang, Xin
gzheng), Dayeh SA (Dayeh, Shadi. A.), Aplin DPR (Aplin, David P. R.), Soci C (
Soci, Cesare), Yu DP (Yu, Dapeng), Wang DL (Wang, Deli)
Source: NANO LETTERS 7 (2): 323-328 FEB 2007
Document Type: Article
Language: English
Cited References: 32 Times Cited: 7
Abstract: We report, for the first time, the synthesis of the high-quality p-t
ype ZnO NWs using a simple chemical vapor deposition method, where phosphorus
pentoxide has been used as the dopant source. Single-crystal phosphorus doped
ZnO NWs have their growth axis along the < 001 > direction and form perfect ve
rtical arrays on a-sapphire. P-type doping was confirmed by photoluminescence
measurements at various temperatures and by studying the electrical transport
in single NWs field-effect transistors. Comparisons of the low-temperature PL
of unintentionally doped ZnO (n-type), as-grown phosphorus-doped ZnO, and anne
aled phosphorus-doped ZnO NWs show clear differences related to the presence o
f intragap donor and acceptor states. The electrical transport measurements of
phosphorus-doped NW FETs indicate a transition from n-type to p-type conducti
on upon annealing at high temperature, in good agreement with the PL results.
The synthesis of p-type ZnO NWs enables novel complementary ZnO NW devices and
opens up enormous opportunities for nanoscale electronics, optoelectronics, and medici
nes.
KeyWords Plus: ZNO NANOWIRE; MAGNETIC SEMICONDUCTORS; PATTERNED GROWTH; SINGLE
; FIELD; TRANSISTORS; NANOBELTS; LASERS
Addresses: Wang DL (reprint author), Univ Calif San Diego, Dept Elect & Comp E
ngn, La Jolla, CA 92093 USA
Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
Peking Univ, Electron Microscopy Lab, Sch Phys, Beijing 100871, Peoples R Chin
a

E-mail Addresses: dwang@ece.ucsd.edu
Publisher: AMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 USA
Subject Category: Chemistry, Multidisciplinary; Nanoscience & Nanotechnology;
Materials Science, Multidisciplinary

--

※ 来源:·珞珈山水BBS站

http://bbs.whu.edu.cn·[FROM: 202.114.78.*]

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